By Eli Kapon
a worthwhile and updated reference for the complete box of circuit elements of excessive velocity semiconductor devices."
, Pages ix-xii
Chapter 1 - Quantum good semiconductor lasers
, Pages 1-121, Bin Zhao, Amnon Yariv
Chapter 2 - Strained Layer Quantum good Lasers
, Pages 123-176, Alfred R. Adams, Eoin P. O'Reilly, Mark Silver
Chapter three - High-Speed Lasers
, Pages 177-290, Radhakrishnan Nagarajan, John E. Bowers
Chapter four - Quantum twine and Quantum Dot Lasers
, Pages 291-360, Eli Kupon
Chapter five - Quantum Optics results in Semiconductor Lasers
, Pages 361-441, Y. Yamamoto, S. Inoue, G. Björk, H. Heitmann, F. Matinaga
, Pages 443-453
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Extra info for Semiconductor Lasers I. Fundamentals
In the bookkeeping analysis for QW lasers, the 3D linear gain Go(3D) was obtained by an expression similar to Eq. 115) w i t h Prj replaced by Prj/dz so that Go(3D) = Go/dz where G O - Go(2D) is the 2D gain coefficient and dz is the QW width. 115) relates the 2D gain coefficient Go to the 2D density of states Pry [see Eq. 110)]. The optical confinement factor was F(3D) = dz/t, where t is the effective optical mode width. The 3D carrier density N3D was related to the 2D carrier density (N - N2D) by N3D = N/dz.
These phenomena are called hot carrier effects. The temperature increase and the spectral distortion will lead to differential gain degradation and a large damping effect on the modulation response through a large nonlinear gain coefficient. Thus the high-speed modulation performance is degraded. Each of these different theories captured certain important aspect related to the modulation dynamics of QW lasers. , the injected carriers outside the QW can significantly influence the modulation response.
E h h ( k ) = h 2 k 2 / ( 2 m h h ) and Ehz(k) = h2k2/ (2mh/). 3. 3, w h e r e ( ),,~ r e p r e s e n t s the average over r and O. 3 can be s u m m a r i z e d as t h a t the e l e e t r o n - h e a w hole transitions and the electron-light hole transitions have the same t r a n s i t i o n m a t r i x e l e m e n t square/z2 for both the TE and the TM modes in the bulk semiconductor structures. In a QW semiconductor structure, as shown in Fig. 5, a thin layer of semiconductor m a t e r i a l of smaller energy b a n d g a p Eg 1 is bounded on either side by semiconductor m a t e r i a l s of bigger energy b a n d g a p Eg 2.
Semiconductor Lasers I. Fundamentals by Eli Kapon