By William B. Grant
Ebook by way of furnish, William B.
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Extra info for Ozone measuring instruments for the stratosphere
French, Reduction of uncertainty in the measurement of the piezoresistive coefficients of silicon with a threeelement rosette, SPIE Conference on Smart Electronics and MEMS, San Diego, USA, 1998. F. Nye, Physical properties of crystals, Clarendon Press, Oxford, 1985. L. E. Pikus, Symmetry and strain-induced effects in semiconductors, Wiley, New York, 1974. S. Smith, Macroscopic symmetry and properties of crystals, in F. Seitz and D. ), Solid State Physics, Vol. 6, Academic Press, New York, pp. 175-249, 1958.
Based on the cantilever technique, a moment is applied to the silicon beam, so it is reasonable to assume further that this moment causes a normal stress only in the x orientation. All the other components of normal and shear stress are zero, since the beam’s surface is free of any other load. Furthermore, by Poisson’s ratio, there are associated strain components and which deform the plane of the cross-sectional area. Such deformations will, however, cause the cross-sectional dimensions to become smaller below the neutral axis and larger above the neutral axis .
1 DC characterization at wafer level The transistor pairs have first been characterized at wafer level and without any external mechanical stress applied. The DC behavior of the vertical transistors has been extracted using the device-characterization program ICCAP. 5 V up to 1 V, while was kept at 0 V. Fig. 4 show the typical measured values at room temperature, which are represented in the form of a Gummel plot. We refrain from marking the individual data points because of their large number and regular distribution.
Ozone measuring instruments for the stratosphere by William B. Grant