By Hadis Morkoç

ISBN-10: 352740838X

ISBN-13: 9783527408382

The 3 volumes of this guide deal with the basics, expertise and nanotechnology of nitride semiconductors with a unprecedented readability and intensity. They current the entire invaluable fundamentals of semiconductor and machine physics and engineering including an in depth reference part. quantity 2 addresses and optical homes of nitride fabrics. It contains semiconductor steel contacts, impurity and service concentrations, and service shipping in semiconductors.

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Extra resources for Handbook of Nitride Semiconductors and Devices, Volume 2: Electronic and Optical Processes in Nitrides

Sample text

2 Current Flow in Metal–Semiconductor Junctions with J te 0 ¼ AÃ T 2 exp ! À qðfB À DfÞ ; kT ð1:8Þ where Jte 0 is the saturation value of the current density Jte, AÃ is the effective Richardson constant, fB is the barrier height, and Df is the image force barrier lowering. 7 is based on the condition that the series resistance of the circuit is negligibly small. It should be pointed out that the saturation current density is typically designated by Js in general. We do the same throughout most of this chapter.

3 kV. The onresistance of the AlGaN diodes was higher than for pure GaN, owing to higher ohmic contract resistance. 5 MW cmÀ2. The breakdown voltage, VB, can be affected by changing the gap between the Schottky barrier and the ohmic contact by employing p-guard rings and extending the Schottky contact edge over an oxide layer for edge termination. 75N rectifiers, with breakdown still occurring at the edges of the Schottky contact [23–25]. The reverse leakage current just before breakdown is dominated by bulk contributions in that it scales with the area of the rectifying contact.

The onresistance of the AlGaN diodes was higher than for pure GaN, owing to higher ohmic contract resistance. 5 MW cmÀ2. The breakdown voltage, VB, can be affected by changing the gap between the Schottky barrier and the ohmic contact by employing p-guard rings and extending the Schottky contact edge over an oxide layer for edge termination. 75N rectifiers, with breakdown still occurring at the edges of the Schottky contact [23–25]. The reverse leakage current just before breakdown is dominated by bulk contributions in that it scales with the area of the rectifying contact.

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Handbook of Nitride Semiconductors and Devices, Volume 2: Electronic and Optical Processes in Nitrides by Hadis Morkoç


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